Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering
- ジャーナル論文
- 著者
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Yoshitaka Shingaya (author) (この著者で検索)National Institute for Materials Science
;
Daiki Nishioka (author) (この著者で検索)National Institute for Materials Science
;
Kazuya Terabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Tsuchiya (author) (この著者で検索)National Institute for Materials Science
- キーワード
- physical reservoir computing, resonant Raman scattering, MoS2, electric double layer transistor, Raman-ion-gating reservoir
- 刊行年月日
- 2025-10-23
- 更新時刻
- 2025-11-17 12:30:04 +0900
Patternable laser-oxidized Ta2O5 dielectric and TaS2 contact for optimizing subthreshold swing of MoS2 field-effect transistors
- ジャーナル論文
- 著者
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;Kuan-Cheng Lu (author) (この著者で検索);Pen-Yuan Shih (author) (この著者で検索);Pin-Hsien Lin (author) (この著者で検索);Shih-Hao Wu (author) (この著者で検索);Kimitoshi Kono (author) (この著者で検索)Wen-Bin Jian (author) (この著者で検索)
https://orcid.org/0000-0002-1898-9641
(unauthenticated)
;
;Yu-Han Lin (author) (この著者で検索);Yo-Yao Ho (author) (この著者で検索)Ching-Hwa Ho (author) (この著者で検索)
https://orcid.org/0000-0002-7195-208X
(unauthenticated)
;
;Shin-Yuan Wang (author) (この著者で検索);Chao-Hsin Chien (author) (この著者で検索)Ching-Yu Chiang (author) (この著者で検索)
https://orcid.org/0000-0002-3640-0474
(unauthenticated)
;
;Shu-Jui Chang (author) (この著者で検索);Yu-Che Huang (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)
;
Takashi Taniguchi (author) (この著者で検索)
;
Kazuhito Tsukagoshi (author) (この著者で検索)
;
Chenming Hu (author) (この著者で検索)
https://orcid.org/0000-0003-0836-6296
(unauthenticated)
- キーワード
- Ta2O5, TaS2, subthreshold swing, MoS2, field-effect transistors
- 刊行年月日
- 2026-02-24
- 更新時刻
- 2026-03-04 16:30:07 +0900