Competition between Bipolar Conduction Modes in Extrinsically p-Doped MoS₂: Interaction with Gate Dielectric Matters

Journal article

Creator

Kyungmin Ko (author) (Search by this author)

Kyungmin Ko ;

Jing Huang (author) (Search by this author)

Jing Huang ;

Jaeeun Kwon (author) (Search by this author)

Jaeeun Kwon ;

Mingyu Jang (author) (Search by this author)

Mingyu Jang ;

Hanbin Cho (author) (Search by this author)

Hanbin Cho ;

Seonguk Yang (author) (Search by this author)

Seonguk Yang ;

Sungyeon Kim (author) (Search by this author)

Sungyeon Kim ;

Sangwoo Park (author) (Search by this author)

Sangwoo Park ;

Takashi Taniguchi (author) (Search by this author)

https://orcid.org/0000-0002-1467-3105

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Takashi Taniguchi ;

Kenji Watanabe (author) (Search by this author)

https://orcid.org/0000-0003-3701-8119

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Kenji Watanabe ;

Der-Yuh Lin (author) (Search by this author)

Der-Yuh Lin ;

Swati Singh (author) (Search by this author)

Swati Singh ;

Dong-Hyeok Lim (author) (Search by this author)

Dong-Hyeok Lim ;

Seth Ariel Tongay (author) (Search by this author)

Seth Ariel Tongay ;

Jun Kang (author) (Search by this author)

Jun Kang ;

Joonki Suh (author) (Search by this author)

Joonki Suh

Keyword

Two-dimensional (2D) semiconductor, Gate dielectric interaction, MoS2 transistor

Date published

2025-01-14

Updated at

2026-07-06 09:47:18 +0900