Detection limit of defect-induced strain in GaN evaluated by valence EELS and correlated structural analysis

ジャーナル論文

著者

Shunsuke Yamashita (author) (この著者で検索)

Sony Semiconductor Solutions Corporation

Shunsuke Yamashita ;

Jun Kikkawa (author) (この著者で検索)

https://orcid.org/0000-0003-0659-1844

National Institute for Materials Science Center for Basic Research on Materials/Advanced Materials Characterization Field/Electron Microscopy Group

NIMS Researchers Directory SAMURAI

Jun Kikkawa ;

Susumu Kusanagi (author) (この著者で検索)

Sony Semiconductor Solutions Corporation

Susumu Kusanagi ;

Ichiro Nomachi (author) (この著者で検索)

Sony Semiconductor Solutions Corporation

Ichiro Nomachi ;

Ryoji Arai (author) (この著者で検索)

Sony Semiconductor Solutions Corporation

Ryoji Arai ;

Yuya Kanitani (author) (この著者で検索)

Sony Semiconductor Solutions Corporation

Yuya Kanitani ;

Koji Kimoto (author) (この著者で検索)

https://orcid.org/0000-0002-3927-0492

National Institute for Materials Science Center for Basic Research on Materials

NIMS Researchers Directory SAMURAI

Koji Kimoto ;

Yoshihiro Kudo (author) (この著者で検索)

Sony Semiconductor Solutions Corporation

Yoshihiro Kudo

キーワード

Limit of detection, Detection threshold, Physical analysis, Gallium nitride, Valence electron energy loss spectroscopy (VEELS), Low-loss spectrum

刊行年月日

2026-01-01

更新時刻

2026-04-30 12:01:11 +0900