Mechanism of ion track formation in silicon by much lower energy deposition than the formation threshold
- ジャーナル論文
- 著者
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H Amekura (author) (この著者で検索)National Institute for Materials Science
;
;K Narumi (author) (この著者で検索);A Chiba (author) (この著者で検索);Y Hirano (author) (この著者で検索);K Yamada (author) (この著者で検索);S Yamamoto (author) (この著者で検索);N Ishikawa (author) (この著者で検索);N Okubo (author) (この著者で検索);M Toulemonde (author) (この著者で検索)Y Saitoh (author) (この著者で検索) - キーワード
- C60 ion, ion track, swift heavy ion, silicon, synergy effect, track recrystallization
- 刊行年月日
- 2023-04-01
- 更新時刻
- 2024-01-05 22:12:20 +0900