Download file (1.05MB)
Download as zip (685KB)

コレクション

引用

説明:

The mechanism of the track formation in crystalline silicon (c-Si) under C60 ion irradiation with the medium energies of 1-9 MeV is discussed. In this energy region, the track formation was not expected because the energy E was much lower than the threshold of Eth = 17 MeV extrapolated in the past literature. The track formation was observed under 3 MeV C60 irradiation but not under 200 MeV Xe ions, while both the irradiations have almost the same Se of 14 keV/nm but different nuclear stopping Sn. The involvement of Sn was strongly suggested for the track formation in c-Si at the sub-threshold Se. The inelastic thermal spike (i-TS) calculations cannot reproduce the high threshold of c-Si from the melting transition but the vaporization transition. The tracks formed by the melting transitions are assumed to quickly disappear by highly enhanced recrystallization in c-Si. Only the tracks formed by the vaporization survive. However, the Se dependence on the track radii formed under 1-9 MeV C60 irradiation was not reproduced by the vaporization transition but the melting one. Collisional processes due to high Sn value interrupt the efficient recrystallization in c-Si. Then the tracks formed by the melting transitions survive under 1-9 MeV C60 irradiation.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: C60 ion, ion track, swift heavy ion, silicon, synergy effect, track recrystallization

刊行年月日: 2023-04-01

出版者: IOP Publishing

掲載誌:

• PHYSICA SCRIPTA (ISSN: 00318949) vol. 98 issue. 4 p. 45701-45701

研究助成金:

• JSPS 22K04990

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1088/1402-4896/acbbf5

関連資料:

その他の識別子:

連絡先:

更新時刻: 2024-01-05 22:12:20 +0900

MDRでの公開時刻: 2023-05-10 11:27:32 +0900