[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility

雑誌

コレクション

Research Highlights

著者

International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (この著者で検索)

National Institute for Materials Science

International Center for Materials Nanoarchitectonics (WPI-MANA)

キーワード

diamond, field-effect transistor, hexagonal boron nitride, mobility, hydrogen-terminated, wide bandgap, hBN, graphite, hBN/h-BN

刊行年月日

2022-07-29

更新時刻

2023-12-26 21:47:16 +0900