3 件のレコードが見つかりました。
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
- ジャーナル論文
- 著者
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;Akira Uedono (author) (この著者で検索);Hideki Sakurai (author) (この著者で検索)Jun Uzuhashi (author) (この著者で検索)National Institute for Materials Science
;
;Tetsuo Narita (author) (この著者で検索);Kacper Sierakowski (author) (この著者で検索);Shoji Ishibashi (author) (この著者で検索);Shigefusa F. Chichibu (author) (この著者で検索);Michal Bockowski (author) (この著者で検索);Jun Suda (author) (この著者で検索);Tadakatsu Ohokubo (author) (この著者で検索);Nobuyuki Ikarashi (author) (この著者で検索)Kazuhiro Hono (author) (この著者で検索)National Institute for Materials Science
;
Tetsu Kachi (author) (この著者で検索) - キーワード
- gallium nitride, vacancy, positron
- 刊行年月日
- 2023-03-15
- 更新時刻
- 2024-01-05 22:12:35 +0900
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
- ジャーナル論文
- 著者
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Jun Uzuhashi (author) (この著者で検索)National Institute for Materials Science
;
Jun Chen (author) (この著者で検索)National Institute for Materials Science
;
Ashutosh Kumar (author) (この著者で検索)
https://orcid.org/0000-0002-8085-1598
(unauthenticated)
National Institute for Materials Science
;
Wei Yi (author) (この著者で検索)
https://orcid.org/0000-0001-5040-8416
(unauthenticated)
National Institute for Materials Science
;
Tadakatsu Ohkubo (author) (この著者で検索)National Institute for Materials Science
;
;Ryo Tanaka (author) (この著者で検索);Shinya Takashima (author) (この著者で検索);Masaharu Edo (author) (この著者で検索);Kacper Sierakowski (author) (この著者で検索);Michal Bockowski (author) (この著者で検索);Hideki Sakurai (author) (この著者で検索);Tetsu Kachi (author) (この著者で検索)Takashi Sekiguchi (author) (この著者で検索)
https://orcid.org/0000-0002-7365-9979
(unauthenticated)
National Institute for Materials Science
;
Kazuhiro Hono (author) (この著者で検索)National Institute for Materials Science
- キーワード
- gallium nitride, implantation, atom probe tomography, cathodoluminescence, scanning transmission electron microscopy
- 刊行年月日
- 2022-05-14
- 更新時刻
- 2024-01-05 22:11:22 +0900
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
- ジャーナル論文
- 著者
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;Emi Kano (author) (この著者で検索);Keita Kataoka (author) (この著者で検索)Jun Uzuhashi (author) (この著者で検索)National Institute for Materials Science
;
;Kenta Chokawa (author) (この著者で検索);Hideki Sakurai (author) (この著者で検索);Akira Uedono (author) (この著者で検索);Tetsuo Narita (author) (この著者で検索);Kacper Sierakowski (author) (この著者で検索);Michal Bockowski (author) (この著者で検索);Ritsuo Otsuki (author) (この著者で検索);Koki Kobayashi (author) (この著者で検索);Yuta Itoh (author) (この著者で検索);Masahiro Nagao (author) (この著者で検索)Tadakatsu Ohkubo (author) (この著者で検索)National Institute for Materials Science
;
Kazuhiro Hono (author) (この著者で検索)National Institute for Materials Science
;
;Jun Suda (author) (この著者で検索);Tetsu Kachi (author) (この著者で検索)Nobuyuki Ikarashi (author) (この著者で検索)
- キーワード
- gallium nitride, transmission electron microscopy, atom probe tomography
- 刊行年月日
- 2022-08-14
- 更新時刻
- 2024-01-05 22:13:58 +0900