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MDR phonon calculation database(7)
MDR lattice thermal conductivity calculation database(5)
NIMS Archives(3)
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HfO2 (11)
HfO2/Si (10)
Auger depth profiling analysis (8)
Ultra low angle incidence ion beam (8)
Phonon (7)
Lattice thermal conductivity (5)
IMFP (3)
MoS2 (3)
diamond (3)
inelastic mean free path (3)
(more)
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84 件のレコードが見つかりました。 1件目から10件目まで表示します。
Ab-initio phonon calculation for HfO2 / Pbcn (60) / materials id 776097
データセット
コレクション
MDR phonon calculation database
著者
Atsushi Togo
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8393-9766
National Institute for Materials Science MaDIS
NIMS Researchers Directory SAMURAI
Atsushi Togo
キーワード
Phonon
,
HfO2
,
Pbcn (60)
刊行年月日
更新時刻
2023-05-14 19:03:08 +0900
Ab-initio phonon calculation for HfO2 / Pbca (61) / materials id 775757
データセット
コレクション
MDR phonon calculation database
著者
Atsushi Togo
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8393-9766
National Institute for Materials Science MaDIS
NIMS Researchers Directory SAMURAI
Atsushi Togo
キーワード
Phonon
,
HfO2
,
Pbca (61)
刊行年月日
更新時刻
2023-05-14 19:03:04 +0900
Ab-initio phonon calculation for HfO2 / P2_1/c (14) / materials id 352
データセット
コレクション
MDR phonon calculation database
著者
Atsushi Togo
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8393-9766
National Institute for Materials Science MaDIS
NIMS Researchers Directory SAMURAI
Atsushi Togo
キーワード
Phonon
,
HfO2
,
P2_1/c (14)
刊行年月日
更新時刻
2023-05-14 18:35:02 +0900
Ab-initio phonon calculation for HfO2 / Pbca (61) / materials id 1858
データセット
コレクション
MDR phonon calculation database
著者
Atsushi Togo
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8393-9766
National Institute for Materials Science MaDIS
NIMS Researchers Directory SAMURAI
Atsushi Togo
キーワード
Phonon
,
HfO2
,
Pbca (61)
刊行年月日
更新時刻
2023-05-14 18:42:22 +0900
Ab-initio phonon calculation for HfO2 / P4_2/mnm (136) / materials id 776532
データセット
コレクション
MDR phonon calculation database
著者
Atsushi Togo
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8393-9766
National Institute for Materials Science MaDIS
NIMS Researchers Directory SAMURAI
Atsushi Togo
キーワード
Phonon
,
HfO2
,
P4_2/mnm (136)
刊行年月日
更新時刻
2023-05-14 19:03:10 +0900
Ab-initio phonon calculation for HfO2 / Pca2_1 (29) / materials id 685097
データセット
コレクション
MDR phonon calculation database
著者
Atsushi Togo
(author) (
この著者で検索
)
https://orcid.org/0000-0001-8393-9766
National Institute for Materials Science MaDIS
NIMS Researchers Directory SAMURAI
Atsushi Togo
キーワード
Phonon
,
HfO2
,
Pca2_1 (29)
刊行年月日
更新時刻
2023-05-14 18:59:36 +0900
Raw data files for Fig. 12 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
データセット
著者
OGIWARA, Toshiya
(author) (
この著者で検索
)
https://orcid.org/0000-0002-7376-6571
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
OGIWARA, Toshiya
;
NAGATA, Takahiro
(author) (
この著者で検索
)
https://orcid.org/0000-0002-8591-2943
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
NAGATA, Takahiro
;
YOSHIKAWA, Hideki
(author) (
この著者で検索
)
https://orcid.org/0000-0002-7389-8865
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
YOSHIKAWA, Hideki
キーワード
Auger depth profiling analysis
,
HfO2/Si
,
Ultra low angle incidence ion beam
刊行年月日
2019-03-07
更新時刻
2024-01-05 22:13:20 +0900
Raw data files for Fig. 11 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
データセット
著者
OGIWARA, Toshiya
(author) (
この著者で検索
)
https://orcid.org/0000-0002-7376-6571
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
OGIWARA, Toshiya
;
NAGATA, Takahiro
(author) (
この著者で検索
)
https://orcid.org/0000-0002-8591-2943
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
NAGATA, Takahiro
;
YOSHIKAWA, Hideki
(author) (
この著者で検索
)
https://orcid.org/0000-0002-7389-8865
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
YOSHIKAWA, Hideki
キーワード
Auger depth profiling analysis
,
HfO2/Si
,
Ultra low angle incidence ion beam
刊行年月日
2019-03-07
更新時刻
2024-04-07 22:57:41 +0900
Raw data files for Fig. 10 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
データセット
著者
OGIWARA, Toshiya
(author) (
この著者で検索
)
https://orcid.org/0000-0002-7376-6571
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
OGIWARA, Toshiya
;
NAGATA, Takahiro
(author) (
この著者で検索
)
https://orcid.org/0000-0002-8591-2943
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
NAGATA, Takahiro
;
YOSHIKAWA, Hideki
(author) (
この著者で検索
)
https://orcid.org/0000-0002-7389-8865
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
YOSHIKAWA, Hideki
キーワード
Auger depth profiling analysis
,
HfO2/Si
,
Ultra low angle incidence ion beam
刊行年月日
2019-03-07
更新時刻
2024-01-05 22:12:41 +0900
Raw data files for Fig. 9 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
データセット
著者
OGIWARA, Toshiya
(author) (
この著者で検索
)
https://orcid.org/0000-0002-7376-6571
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
OGIWARA, Toshiya
;
NAGATA, Takahiro
(author) (
この著者で検索
)
https://orcid.org/0000-0002-8591-2943
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
NAGATA, Takahiro
;
YOSHIKAWA, Hideki
(author) (
この著者で検索
)
https://orcid.org/0000-0002-7389-8865
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
YOSHIKAWA, Hideki
キーワード
Auger depth profiling analysis
,
HfO2/Si
,
Ultra low angle incidence ion beam
刊行年月日
2019-03-07
更新時刻
2024-10-08 12:20:27 +0900
キーワード
HfO2
(11)
HfO2/Si
(10)
Auger depth profiling analysis
(8)
Ultra low angle incidence ion beam
(8)
Phonon
(7)
Lattice thermal conductivity
(5)
IMFP
(3)
MoS2
(3)
diamond
(3)
inelastic mean free path
(3)
Boron-doped diamond
(2)
Ga2O3
(2)
NIMS
(2)
Pbca (61)
(2)
Ultra Low Angle Incidence Ion Beam
(2)
atomic layer deposition
(2)
dielectric function model
(2)
energy loss function
(2)
epitaxy
(2)
ferroelectric HfO2-based thin films
(2)
graphene
(2)
hexagonal boron nitride
(2)
modified Bethe equation
(2)
power device
(2)
物質・材料研究機構
(2)
Hf0.5Zr0.5O2
(1)
Nb3Sn reaction
(1)
Polar axis orientation
(1)
Pulse laser deposition
(1)
{100} Orientation control
(1)
(Al,Sc)N Films
(1)
2D semiconductor
(1)
ACOM-TEM
(1)
ATO
(1)
All 2D heterostructure devices
(1)
Amorphous oxide cathode
(1)
Auger Depth Profiling Analysis
(1)
Auger Depth Profiling analysis
(1)
Band to band tunneling
(1)
Bayesian estimation
(1)
Bethe equation
(1)
C60 pyrrolidine tris-acid
(1)
Carrier modulation
(1)
Cluster Analysis
(1)
Coulomb interactions
(1)
CrI3
(1)
DNA translocation
(1)
Diamond
(1)
Electro-absorption modulators
(1)
Epitaxial film
(1)
Exchange Monte Carlo method
(1)
Fd-3m (227)
(1)
Ferroelectric
(1)
Ferroelectric HfO2-based film
(1)
Ferroelectric field-effect transistor (FeFET)
(1)
Field effect
(1)
Field-effect transistors
(1)
Flash sintering
(1)
Flexural strength
(1)
Floating gate
(1)
GaN
(1)
HAXPES
(1)
Hafnium diboride
(1)
Hf doping
(1)
HfO2-based ferroelectric film
(1)
High temperature materials
(1)
High-κ dielectric
(1)
Ho2Hf2O7
(1)
Hot electron infrared detector
(1)
Hydrogen-terminated diamond
(1)
InP
(1)
Inorganic Compounds
(1)
Ionic Liquid
(1)
Light-detection
(1)
Luminescence
(1)
MOCVD-grownMoS2wafers
(1)
MOS capacitor
(1)
MOSFET
(1)
Magnetic phases
(1)
Multiple phase
(1)
NIR
(1)
Nanolaser
(1)
Nb3Sn
(1)
Negative differential resistance
(1)
Negative differential transconductance
(1)
Nernst effect
(1)
Nonvolatile memory technology
(1)
Organic antiambipolar transistor
(1)
P2_1/c (14)
(1)
P4_2/mnm (136)
(1)
Pareto solutions
(1)
Pbcn (60)
(1)
Pca2_1 (29)
(1)
Raman spectroscopy
(1)
ReS2
(1)
Rechargeable magnesium battery
(1)
Reconfigurable artificial synapses
(1)
SESSA
(1)
Schottky diode
(1)
Self-aligned gate electrode
(1)
Single-molecule device
(1)
Sliding ferroelectricity
(1)
Subthreshold swing
(1)
TEM
(1)
TPP
(1)
Ta2O5
(1)
TaS2
(1)
Transistor
(1)
Type III band alignment
(1)
WSe2 Contact FET
(1)
Wurtzite
(1)
X-ray photoelectron spectroscopy
(1)
anisotropic etching
(1)
atomically thin semiconductors
(1)
barrier-free contact
(1)
carbon nanotubes
(1)
chemical potential
(1)
chirality
(1)
crystal phase control
(1)
current collector corrosion
(1)
dielectric screening
(1)
dielectric strength
(1)
dielectrics
(1)
effective attenuation length
(1)
electrolyte decomposition
(1)
electron inelastic mean free path
(1)
element addition
(1)
elemental solids
(1)
field-effect transistors
(1)
field-induced phase transition
(1)
flexural strength
(1)
forming gas
(1)
free energy
(1)
free volume
(1)
fullerene
(1)
germanium
(1)
grain growth
(1)
grain refinement
(1)
grain size
(1)
graphene field effect transistors
(1)
hafnium carbide
(1)
high speed modulator
(1)
high-temperature materials
(1)
impurity doping
(1)
indium selenide
(1)
information depth
(1)
interface engineering
(1)
interfacialchargetransfer
(1)
laser annealing
(1)
low temperature fabrication process
(1)
magnesium rechargeable batteries
(1)
magnetoresistance, first-principles calculation, Heusler compound, TMR, CPP-GMR, ballistic transport, exchange stiffness
(1)
mean escape depth
(1)
mechanical stress
(1)
memory devices
(1)
nanolaminate
(1)
nanopore
(1)
operando
(1)
optical data
(1)
oxidant
(1)
phototransistor
(1)
plasma-free process
(1)
polycrystalline growth
(1)
semiconductor
(1)
semiconductors
(1)
sensors
(1)
single-level transport model
(1)
subthreshold swing
(1)
super-high dielectric constant
(1)
surface sensitivity
(1)
terahertz frequency
(1)
thermal conductivity; thermal insulator; thin film; superlattice; transparency
(1)
thin film
(1)
top-gatefield-effecttransistors
(1)
trace water
(1)
transfer-freedevicefabrication
(1)
transistors
(1)
transition voltage spectroscopy
(1)
tunneling current
(1)
van der Waals heterojunction
(1)
wafer-scale2Dsemiconductors
(1)
weakly coordinating anion
(1)
α-Ga2O3
(1)
アンチ・アンバイポーラトランジスタ
(1)
ダイヤモンド
(1)
トランジスタ
(1)
ロジック・イン・メモリ
(1)
再構成可能2入力論理回路
(1)
原子層堆積法
(1)
多値論理回路
(1)
無機材質研究所
(1)
負性微分トランスコンダクタンス
(1)
電界効果
(1)
RDEメタデータ定義
RDE送り状
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絞り込み
コレクション
MDR phonon calculation database(7)
MDR lattice thermal conductivity calculation database(5)
NIMS Archives(3)
資源タイプ
ジャーナル論文(59)
データセット(20)
書籍(4)
プロシーディングス論文(1)
キーワード
HfO2 (11)
HfO2/Si (10)
Auger depth profiling analysis (8)
Ultra low angle incidence ion beam (8)
Phonon (7)
Lattice thermal conductivity (5)
IMFP (3)
MoS2 (3)
diamond (3)
inelastic mean free path (3)
(more)
ライセンス
In Copyright (38)
Creative Commons BY Attribution 4.0 International (28)
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (9)
Creative Commons BY-NC Attribution-NonCommercial 4.0 International (5)
cc-by-nc-3.0 (1)
ファイル種別
application/pdf (67)
application/x-xz (12)
image/png (12)
application/zip (10)
text/x-log (5)
application/vnd.openxmlformats-officedocument.wordprocessingml.document (3)
text/plain (3)