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84 件のレコードが見つかりました。 81件目から84件目まで表示します。
Amorphous oxide cathode enabling room-temperature rechargeable magnesium batteries
ジャーナル論文
著者
Tomoya Kawaguchi
(author) (
この著者で検索
)
https://orcid.org/0000-0002-7600-4847
(unauthenticated)
Tomoya Kawaguchi
;
Hikari Sakurai
(author) (
この著者で検索
)
Hikari Sakurai
;
Shusuke Fukui
(author) (
この著者で検索
)
Shusuke Fukui
;
Xiatong Ye
(author) (
この著者で検索
)
https://orcid.org/0000-0002-5932-5964
(unauthenticated)
Xiatong Ye
;
Hongyi Li
(author) (
この著者で検索
)
https://orcid.org/0000-0003-1890-3825
(unauthenticated)
Hongyi Li
;
Toshihiko Mandai
(author) (
この著者で検索
)
https://orcid.org/0000-0002-2403-7794
NIMS Researchers Directory SAMURAI
Toshihiko Mandai
;
Norihiko L. Okamoto
(author) (
この著者で検索
)
https://orcid.org/0000-0003-0199-7271
(unauthenticated)
Norihiko L. Okamoto
;
Tetsu Ichitsubo
(author) (
この著者で検索
)
https://orcid.org/0000-0002-1127-3034
(unauthenticated)
Tetsu Ichitsubo
キーワード
Amorphous oxide cathode
,
Rechargeable magnesium battery
,
free volume
刊行年月日
2025-09-17
更新時刻
2025-10-21 16:06:37 +0900
First-Principles Studies on Spin-Dependent Transport of Magnetic Junctions with Half-Metallic Heusler Compounds
ジャーナル論文
著者
Y. Miura
(author) (
この著者で検索
)
https://orcid.org/0000-0002-5605-5452
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Y. Miura
キーワード
magnetoresistance, first-principles calculation, Heusler compound, TMR, CPP-GMR, ballistic transport, exchange stiffness
刊行年月日
2023-07-01
更新時刻
2024-05-24 16:30:15 +0900
NIMS 5年の歩み
書籍
コレクション
NIMS Archives
著者
物質・材料研究機構
(editor) (
この著者で検索
)
物質・材料研究機構
キーワード
NIMS
,
物質・材料研究機構
刊行年月日
2006-02-10
更新時刻
2025-01-14 15:42:13 +0900
無機材質研究所創立30周年記念誌 : 21世紀を支える先端無機材質の研究
書籍
コレクション
NIMS Archives
著者
無機材質研究所創立30周年記念誌編集委員
(editor) (
この著者で検索
)
無機材質研究所創立30周年記念誌編集委員
キーワード
無機材質研究所
刊行年月日
1996-11-01
更新時刻
2025-01-14 15:40:12 +0900
キーワード
HfO2
(11)
HfO2/Si
(10)
Auger depth profiling analysis
(8)
Ultra low angle incidence ion beam
(8)
Phonon
(7)
Lattice thermal conductivity
(5)
IMFP
(3)
MoS2
(3)
diamond
(3)
inelastic mean free path
(3)
Boron-doped diamond
(2)
Ga2O3
(2)
NIMS
(2)
Pbca (61)
(2)
Ultra Low Angle Incidence Ion Beam
(2)
atomic layer deposition
(2)
dielectric function model
(2)
energy loss function
(2)
epitaxy
(2)
ferroelectric HfO2-based thin films
(2)
graphene
(2)
hexagonal boron nitride
(2)
modified Bethe equation
(2)
power device
(2)
物質・材料研究機構
(2)
Hf0.5Zr0.5O2
(1)
Nb3Sn reaction
(1)
Polar axis orientation
(1)
Pulse laser deposition
(1)
{100} Orientation control
(1)
(Al,Sc)N Films
(1)
2D semiconductor
(1)
ACOM-TEM
(1)
ATO
(1)
All 2D heterostructure devices
(1)
Amorphous oxide cathode
(1)
Auger Depth Profiling Analysis
(1)
Auger Depth Profiling analysis
(1)
Band to band tunneling
(1)
Bayesian estimation
(1)
Bethe equation
(1)
C60 pyrrolidine tris-acid
(1)
Carrier modulation
(1)
Cluster Analysis
(1)
Coulomb interactions
(1)
CrI3
(1)
DNA translocation
(1)
Diamond
(1)
Electro-absorption modulators
(1)
Epitaxial film
(1)
Exchange Monte Carlo method
(1)
Fd-3m (227)
(1)
Ferroelectric
(1)
Ferroelectric HfO2-based film
(1)
Ferroelectric field-effect transistor (FeFET)
(1)
Field effect
(1)
Field-effect transistors
(1)
Flash sintering
(1)
Flexural strength
(1)
Floating gate
(1)
GaN
(1)
HAXPES
(1)
Hafnium diboride
(1)
Hf doping
(1)
HfO2-based ferroelectric film
(1)
High temperature materials
(1)
High-κ dielectric
(1)
Ho2Hf2O7
(1)
Hot electron infrared detector
(1)
Hydrogen-terminated diamond
(1)
InP
(1)
Inorganic Compounds
(1)
Ionic Liquid
(1)
Light-detection
(1)
Luminescence
(1)
MOCVD-grownMoS2wafers
(1)
MOS capacitor
(1)
MOSFET
(1)
Magnetic phases
(1)
Multiple phase
(1)
NIR
(1)
Nanolaser
(1)
Nb3Sn
(1)
Negative differential resistance
(1)
Negative differential transconductance
(1)
Nernst effect
(1)
Nonvolatile memory technology
(1)
Organic antiambipolar transistor
(1)
P2_1/c (14)
(1)
P4_2/mnm (136)
(1)
Pareto solutions
(1)
Pbcn (60)
(1)
Pca2_1 (29)
(1)
Raman spectroscopy
(1)
ReS2
(1)
Rechargeable magnesium battery
(1)
Reconfigurable artificial synapses
(1)
SESSA
(1)
Schottky diode
(1)
Self-aligned gate electrode
(1)
Single-molecule device
(1)
Sliding ferroelectricity
(1)
Subthreshold swing
(1)
TEM
(1)
TPP
(1)
Ta2O5
(1)
TaS2
(1)
Transistor
(1)
Type III band alignment
(1)
WSe2 Contact FET
(1)
Wurtzite
(1)
X-ray photoelectron spectroscopy
(1)
anisotropic etching
(1)
atomically thin semiconductors
(1)
barrier-free contact
(1)
carbon nanotubes
(1)
chemical potential
(1)
chirality
(1)
crystal phase control
(1)
current collector corrosion
(1)
dielectric screening
(1)
dielectric strength
(1)
dielectrics
(1)
effective attenuation length
(1)
electrolyte decomposition
(1)
electron inelastic mean free path
(1)
element addition
(1)
elemental solids
(1)
field-effect transistors
(1)
field-induced phase transition
(1)
flexural strength
(1)
forming gas
(1)
free energy
(1)
free volume
(1)
fullerene
(1)
germanium
(1)
grain growth
(1)
grain refinement
(1)
grain size
(1)
graphene field effect transistors
(1)
hafnium carbide
(1)
high speed modulator
(1)
high-temperature materials
(1)
impurity doping
(1)
indium selenide
(1)
information depth
(1)
interface engineering
(1)
interfacialchargetransfer
(1)
laser annealing
(1)
low temperature fabrication process
(1)
magnesium rechargeable batteries
(1)
magnetoresistance, first-principles calculation, Heusler compound, TMR, CPP-GMR, ballistic transport, exchange stiffness
(1)
mean escape depth
(1)
mechanical stress
(1)
memory devices
(1)
nanolaminate
(1)
nanopore
(1)
operando
(1)
optical data
(1)
oxidant
(1)
phototransistor
(1)
plasma-free process
(1)
polycrystalline growth
(1)
semiconductor
(1)
semiconductors
(1)
sensors
(1)
single-level transport model
(1)
subthreshold swing
(1)
super-high dielectric constant
(1)
surface sensitivity
(1)
terahertz frequency
(1)
thermal conductivity; thermal insulator; thin film; superlattice; transparency
(1)
thin film
(1)
top-gatefield-effecttransistors
(1)
trace water
(1)
transfer-freedevicefabrication
(1)
transistors
(1)
transition voltage spectroscopy
(1)
tunneling current
(1)
van der Waals heterojunction
(1)
wafer-scale2Dsemiconductors
(1)
weakly coordinating anion
(1)
α-Ga2O3
(1)
アンチ・アンバイポーラトランジスタ
(1)
ダイヤモンド
(1)
トランジスタ
(1)
ロジック・イン・メモリ
(1)
再構成可能2入力論理回路
(1)
原子層堆積法
(1)
多値論理回路
(1)
無機材質研究所
(1)
負性微分トランスコンダクタンス
(1)
電界効果
(1)
RDEメタデータ定義
RDE送り状
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絞り込み
コレクション
MDR phonon calculation database(7)
MDR lattice thermal conductivity calculation database(5)
NIMS Archives(3)
資源タイプ
ジャーナル論文(59)
データセット(20)
書籍(4)
プロシーディングス論文(1)
キーワード
HfO2 (11)
HfO2/Si (10)
Auger depth profiling analysis (8)
Ultra low angle incidence ion beam (8)
Phonon (7)
Lattice thermal conductivity (5)
IMFP (3)
MoS2 (3)
diamond (3)
inelastic mean free path (3)
(more)
ライセンス
In Copyright (38)
Creative Commons BY Attribution 4.0 International (28)
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (9)
Creative Commons BY-NC Attribution-NonCommercial 4.0 International (5)
cc-by-nc-3.0 (1)
ファイル種別
application/pdf (67)
application/x-xz (12)
image/png (12)
application/zip (10)
text/x-log (5)
application/vnd.openxmlformats-officedocument.wordprocessingml.document (3)
text/plain (3)