[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility

Magazine

Collection

Research Highlights

Creator

International Center for Materials Nanoarchitectonics (WPI-MANA)

Keyword

diamond, field-effect transistor, hexagonal boron nitride, mobility, hydrogen-terminated, wide bandgap, hBN, graphite, hBN/h-BN

Date published

2022-07-29

Updated at

2023-12-26 21:47:16 +0900