Observation of Atomic-Scale Structural Changes in Al₂O₃/GaN Interfacial Layers Prepared with a Dummy-SiO₂ Process

Article

Creator

Jun Uzuhashi ; Yoshihiro Irokawa ; Toshihide Nabatame ; Tadakatsu Ohkubo ; Yasuo Koide

Keyword

transmission electron microscopy, metal-oxide-semiconductor

Date published

2025-08-01

Updated at

2025-08-26 11:15:20 +0900