Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy

Article

Creator

Yuichi Oshima ; Encarnaciόn G. Vίllora ; Kiyoshi Shimamura

Keyword

β-Ga2O3, heteroepitaxy

Date published

2014-10-28

Updated at

2024-01-22 09:35:42 +0900