2 records found.
Interface engineering of HfO 2 -based ferroelectric devices for crystal phase control and enhanced ferroelectricity using atomic-layer-deposited ZrO 2 nucleation layers
- Journal article
- Creator
-
Takashi Onaya (author) (Search by this author)
https://orcid.org/0000-0002-2710-8623
(unauthenticated)
National Institute for Materials Science
;
Toshihide Nabatame (author) (Search by this author)National Institute for Materials Science
- Keyword
- atomic layer deposition, ferroelectric HfO2-based thin films, memory devices, interface engineering, crystal phase control
- Date published
- 2026-04-30
- Updated at
- 2026-07-13 17:01:06 +0900
Effects of oxidant selection for atomic layer deposition on impurity removal and crystallinity of as-grown Hf1− x Zr x O2 thin films
- Journal article
- Creator
-
;Haoming Che (author) (Search by this author)Takashi Onaya (author) (Search by this author)
https://orcid.org/0000-0002-2710-8623
(unauthenticated)
National Institute for Materials Science
;
;Atsushi Tamura (author) (Search by this author);Masaki Ishii (author) (Search by this author);Hiroshi Taka (author) (Search by this author)Koji Kita (author) (Search by this author)
- Keyword
- atomic layer deposition, ferroelectric HfO2-based thin films, oxidant, low temperature fabrication process
- Date published
- 2026-05-01
- Updated at
- 2026-07-14 10:27:45 +0900