Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface

Article

Creator

Takahiro Nagata ; Asahiko Matsuda ; Takashi Teramoto ; Dominic Gerlach ; Peng Shen ; Shigenori Ueda ; Takako Kimura ; Christian Dussarrat ; Toyohiro Chikyow

Keyword

gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination

Date published

2025-03-07

Updated at

2025-03-26 17:26:31 +0900