Step-and-terrace surface formation on (001) β-Ga₂O₃ by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer

Article

Creator

Takayoshi Oshima

Keyword

Ga2O3, TMAH, Wet etching

Date published

2025-08-01

Updated at

2025-08-18 16:30:36 +0900