Temperature- and depth-dependent valence band electronic structures of half-metallic ${\mathrm{Co}}_2\mathrm{MnSi}$ studied by hard x-ray photoemission spectroscopy

Article

Creator

Shigenori Ueda ; Yuichi Fujita ; Ivan Kurniawan ; Yuya Sakuraba ; Yoshio Miura

Keyword

Co2MnSi, HAXPES, Temperature dependence, Interface and bulk electronic states, interface and bulk magnetic properties, X-ray polarization dependence

Date published

2026-02-18

Updated at

2026-02-21 08:30:04 +0900