Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control

Journal article

Creator

Masataka Imura (author) (Search by this author)

https://orcid.org/0000-0002-4236-9549

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Masataka Imura ;

Takanobu Hiroto (author) (Search by this author)

https://orcid.org/0000-0002-6176-5782

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Takanobu Hiroto ;

Takaaki Mano (author) (Search by this author)

https://orcid.org/0000-0002-6955-260X

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Takaaki Mano ;

Yuri Itokazu (author) (Search by this author)

Yuri Itokazu ;

Masafumi Jo (author) (Search by this author)

Masafumi Jo

Keyword

MOVPE, GaN, InN, InGaN, XRD, Superlattice

Date published

2026-03-21

Updated at

2026-04-03 09:31:08 +0900