In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition

Article

Creator

Akihiro Shimada ; Haruna Shiomi ; Tetsuya Tohei ; Yusuke Hayashi ; Masaya Yamaguchi ; Junpei Yamamoto ; Takeaki Hamachi ; Yasuhiko Imai ; Kazushi Sumitani ; Shigeru Kimura ; Shota Kaneki ; Tamotsu Hashizume ; Akira Sakai

Keyword

GaN, HEMT, Strain, In situ

Date published

2025-08-21

Updated at

2025-08-23 08:30:23 +0900