Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

Article

Creator

Takayoshi Oshima ; Yuichi Oshima

Keyword

Ga2O3, (-102), selective area growth, selective area etching

Date published

2024-01-22

Updated at

2025-01-25 12:30:12 +0900