- Random access memory (2)
- Crystallographic defects (1)
- DNA (1)
- Electrical properties and parameters (1)
- Electronic bandstructure (1)
- Field effect transistor (1)
- First-principle calculations (1)
- Resistive switching (1)
- Thermally stimulated current spectroscopy (1)
- Transmission electron microscope (1)
2 records found.
Nanoporous Dna Field Effect Transistor with Potential for Random‐Access Memory Applications: A Selectivity Performance Evaluation
- Journal article
- Creator
-
;Volkan Kilinc (author) (Search by this author)Ryoma Hayakawa (author) (Search by this author)National Institute for Materials Science
;
;Yusuke Yamauchi (author) (Search by this author)National Institute for Materials ScienceYutaka Wakayama (author) (Search by this author)National Institute for Materials Science
;
Jonathan P. Hill (author) (Search by this author)National Institute for Materials Science
- Keyword
- DNA, Field effect transistor, Random access memory
- Date published
- 2024-02-02
- Updated at
- 2024-08-19 16:30:24 +0900
Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory
- Journal article
- Creator
-
;Kubota, Masato (author) (Search by this author);Nigo, Seisuke (author) (Search by this author)Kitazawa, Hideaki (author) (Search by this author)
;
Harada, Yoshitomo (author) (Search by this author)
;
;Kido, Giyuu (author) (Search by this author);Hirayama, Taisei (author) (Search by this author)Kato, Seiichi (author) (Search by this author)
- Keyword
- Crystallographic defects, Random access memory, Electrical properties and parameters, First-principle calculations, electron energy loss spectroscopy, Electronic bandstructure, semiconductor structures, Resistive switching, Thermally stimulated current spectroscopy, Transmission electron microscope
- Date published
- 2012-08-01
- Updated at
- 2024-01-05 22:12:58 +0900