論文 Nanoporous Dna Field Effect Transistor with Potential for Random‐Access Memory Applications: A Selectivity Performance Evaluation

Volkan Kilinc ; Ryoma Hayakawa SAMURAI ORCID (National Institute for Materials ScienceROR) ; Yusuke Yamauchi (National Institute for Materials ScienceROR) ; Yutaka Wakayama SAMURAI ORCID (National Institute for Materials ScienceROR) ; Jonathan P. Hill SAMURAI ORCID (National Institute for Materials ScienceROR)

コレクション

引用
Volkan Kilinc, Ryoma Hayakawa, Yusuke Yamauchi, Yutaka Wakayama, Jonathan P. Hill. Nanoporous Dna Field Effect Transistor with Potential for Random‐Access Memory Applications: A Selectivity Performance Evaluation. Advanced Sensor Research. 2024, 3 (5), 2300176. https://doi.org/10.1002/adsr.202300176
SAMURAI

説明:

(abstract)

Methods to encode digital data items as strands of synthetic DNA followed by selective data retrieval have been demonstrated. However, these initially bio-oriented processes remain slow and not optimized. DNA field-effect transistor (DNA-FET) is studied here as a possible random-access memory (RAM) device for simple, selective and rapid ssDNA fragment retrieval used as data pool identifier. The DNA-FET is based on a co-planar Au-gated fully organic transistor appended with short single-stranded DNA (ssDNA) probes bearing a blocking molecule to prevent partial hybridization and achieve near perfect selectivity for short length ssDNA (up to 45 nt). Examination of transconductance of the novel active layer incorporating a DNA nanopore architecture reveals enhanced binding site accessibility. This, in turn, facilitates discriminatory hybridization, particularly in the physical retrieval of short-length ssDNA from a competitive, concentrated ssDNA background pool consisting of nine different sequences, with at least one nucleotide difference. The DNA-FET exhibits rapid operation (9 min) in the millivolt range, low detection limit (sub-femtomolar), high selectivity and reusability. Considering the straightforward concept, near error-free identification
capacity and hypothetically outstanding scalability, the DNA-FET described here has potential as a foundation for further exploration of advanced RAM technology in the DNA data storage process.

権利情報:

キーワード: DNA, Field effect transistor, Random access memory

刊行年月日: 2024-02-02

出版者: Wiley

掲載誌:

  • Advanced Sensor Research (ISSN: 27511219) vol. 3 issue. 5 p. 1-14 2300176

研究助成金:

  • Japan Society for the Promotion of Science
  • Ministry of Education, Culture, Sports, Science and Technology

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/adsr.202300176

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更新時刻: 2024-08-19 16:30:24 +0900

MDRでの公開時刻: 2024-08-19 16:30:24 +0900

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