Nanoporous Dna Field Effect Transistor with Potential for Random‐Access Memory Applications: A Selectivity Performance Evaluation

Volkan Kilinc; Ryoma Hayakawa; Yusuke Yamauchi; Yutaka Wakayama; Jonathan P. Hill

doi:10.1002/adsr.202300176

Article Nanoporous Dna Field Effect Transistor with Potential for Random‐Access Memory Applications: A Selectivity Performance Evaluation

Volkan Kilinc ; Ryoma Hayakawa (National Institute for Materials Science) ; Yusuke Yamauchi (National Institute for Materials Science) ; Yutaka Wakayama (National Institute for Materials Science) ; Jonathan P. Hill (National Institute for Materials Science)

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Volkan Kilinc, Ryoma Hayakawa, Yusuke Yamauchi, Yutaka Wakayama, Jonathan P. Hill. Nanoporous Dna Field Effect Transistor with Potential for Random‐Access Memory Applications: A Selectivity Performance Evaluation. Advanced Sensor Research. 2024, 3 (5), 2300176. https://doi.org/10.1002/adsr.202300176

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Methods to encode digital data items as strands of synthetic DNA followed by selective data retrieval have been demonstrated. However, these initially bio-oriented processes remain slow and not optimized. DNA field-effect transistor (DNA-FET) is studied here as a possible random-access memory (RAM) device for simple, selective and rapid ssDNA fragment retrieval used as data pool identifier. The DNA-FET is based on a co-planar Au-gated fully organic transistor appended with short single-stranded DNA (ssDNA) probes bearing a blocking molecule to prevent partial hybridization and achieve near perfect selectivity for short length ssDNA (up to 45 nt). Examination of transconductance of the novel active layer incorporating a DNA nanopore architecture reveals enhanced binding site accessibility. This, in turn, facilitates discriminatory hybridization, particularly in the physical retrieval of short-length ssDNA from a competitive, concentrated ssDNA background pool consisting of nine different sequences, with at least one nucleotide difference. The DNA-FET exhibits rapid operation (9 min) in the millivolt range, low detection limit (sub-femtomolar), high selectivity and reusability. Considering the straightforward concept, near error-free identification
capacity and hypothetically outstanding scalability, the DNA-FET described here has potential as a foundation for further exploration of advanced RAM technology in the DNA data storage process.

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