- Crystallographic defects (2)
- Chemical vapor deposition (1)
- Elasticity theory (1)
- Electrical properties and parameters (1)
- Electronic bandstructure (1)
- First-principle calculations (1)
- Optically detected magnetic resonance, (1)
- Raman spectroscopy (1)
- Random access memory (1)
- Resistive switching (1)
2 records found.
Evaluation of stress tensor around a threading defect in diamond: Application of NV center-based measurement and comparative multi-modal analysis
- Journal article
- Creator
-
Takeyuki Tsuji (author) (Search by this author)National Institute for Materials Science
;
;Shunta Harada (author) (Search by this author)Tokuyuki Teraji (author) (Search by this author)National Institute for Materials Science
- Keyword
- Crystallographic defects, Optically detected magnetic resonance,, Chemical vapor deposition, X-ray topography, Raman spectroscopy, Elasticity theory
- Date published
- 2025-11-07
- Updated at
- 2025-12-19 16:30:36 +0900
Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory
- Journal article
- Creator
-
;Kubota, Masato (author) (Search by this author);Nigo, Seisuke (author) (Search by this author)Kitazawa, Hideaki (author) (Search by this author)
;
Harada, Yoshitomo (author) (Search by this author)
;
;Kido, Giyuu (author) (Search by this author);Hirayama, Taisei (author) (Search by this author)Kato, Seiichi (author) (Search by this author)
- Keyword
- Crystallographic defects, Random access memory, Electrical properties and parameters, First-principle calculations, electron energy loss spectroscopy, Electronic bandstructure, semiconductor structures, Resistive switching, Thermally stimulated current spectroscopy, Transmission electron microscope
- Date published
- 2012-08-01
- Updated at
- 2024-01-05 22:12:58 +0900