Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

Article

Creator

Masatomo Sumiya ; Osamu Goto ; Yuki Takahara ; Yasutaka Imanaka ; Liwen Sang ; Noboru Fukuhara ; Taichiro Konno ; Fumimasa Horikiri ; Takeshi Kimura ; Akira Uedono ; Hajime Fujikura

Keyword

HEMT, III-V nitride semiconductor, heterointerface

Date published

2023-08-01

Updated at

2024-12-10 16:56:26 +0900