Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator

Article

Creator

Yosuke Sasama ; Takuya Iwasaki ; Mohammad Monish ; Kenji Watanabe ; Takashi Taniguchi ; Yamaguchi Takahide

Keyword

Hydrogen-terminated diamond, Field-effect transistors, hexagonal boron nitride, Self-aligned gate electrode

Date published

2024-08-26

Updated at

2024-09-12 16:30:45 +0900