3 records found.
Aluminum-Catalyzed Lateral Growth of Spherulite-like GeS Thin Films on Insulating Substrates Using Vapor Transport: Implications for Electro-optic Applications
- Journal article
- Creator
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Qinqiang Zhang (author) (Search by this author)
;
Ryo Matsumura (author) (Search by this author)
;
Naoki Fukata (author) (Search by this author)
- Keyword
- GeS
- Date published
- 2025-05-30
- Updated at
- 2025-08-21 12:30:39 +0900
Synthesis of submillimeter-scale laterally-grown germanium monosulfide thin films and their electro-optic applications
- Journal article
- Creator
-
Qinqiang Zhang (author) (Search by this author)National Institute for Materials Science
;
Ryo Matsumura (author) (Search by this author)National Institute for Materials Science
;
Kazuhito Tsukagoshi (author) (Search by this author)National Institute for Materials Science
;
Naoki Fukata (author) (Search by this author)
- Keyword
- Lateral growth, Germanium monosulfide, Two-dimensional layered semiconductors, Field effect transistors, Optoelectronics, Hysteresis
- Date published
- 2024-10-09
- Updated at
- 2025-10-21 15:51:32 +0900
Enhancing silicon photodetector performance through spectral downshifting using core-shell CdZnS/ZnS and perovskite CsPbBr3 quantum dots
- Journal article
- Creator
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;Kumaar Swamy Reddy Bapathi (author) (Search by this author);Mostafa F. Abdelbar (author) (Search by this author)National Institute for Materials ScienceWipakorn Jevasuwan (author) (Search by this author)National Institute for Materials Science
;
Qinqiang Zhang (author) (Search by this author)National Institute for Materials Science
;
;Pramod H. Borse (author) (Search by this author);Sushmee Badhulika (author) (Search by this author)Naoki Fukata (author) (Search by this author)National Institute for Materials Science
- Keyword
- quantum dot, spectral downshifting, photodetector, solution-processed, silicon
- Date published
- 2024-06-03
- Updated at
- 2024-08-23 14:00:21 +0900