ジャーナル論文 Enhancing silicon photodetector performance through spectral downshifting using core-shell CdZnS/ZnS and perovskite CsPbBr3 quantum dots
Kumaar Swamy Reddy Bapathi (author) (この著者で検索)
;
Mostafa F. Abdelbar (author) (この著者で検索)
National Institute for Materials Science
;
Wipakorn Jevasuwan (author) (この著者で検索)
ORCID SAMURAI ;
Qinqiang Zhang (author) (この著者で検索)
ORCID SAMURAI ;
Pramod H. Borse (author) (この著者で検索)
;
Sushmee Badhulika (author) (この著者で検索)
;
Naoki Fukata (author) (この著者で検索)
ORCID SAMURAI
コレクション

引用
Kumaar Swamy Reddy Bapathi, Mostafa F. Abdelbar, Wipakorn Jevasuwan, Qinqiang Zhang, Pramod H. Borse, Sushmee Badhulika, Naoki Fukata. Enhancing silicon photodetector performance through spectral downshifting using core-shell CdZnS/ZnS and perovskite CsPbBr3 quantum dots. Nano Energy. 2024, 128 (), 109832. https://doi.org/10.1016/j.nanoen.2024.109832
SAMURAI

説明:

(abstract)

Silicon (Si) photodetectors do not efficiently capture photons in the UV region: this has been a major impediment to their application in several areas. However, quantum dots (QDs), which convert higher-energy photons into lower-energy photons via spectral downshifting, have emerged as promising candidates for enhancing the UV response of silicon photodetectors. In this study, we investigate the performance of Si photodetectors in the form of sensitized perovskite (CsPbBr3) quantum dots and compare them with core-shell (CdZnS/ZnS) quantum dots for spectral downshifting applications. Using monolithic integration of quantum dots over the silicon photodetector surface, we systematically analyze their electrical and optical characteristics to elucidate the impact of quantum dot structures on device performance. Spectral responsivity measurements reveal a significant enhancement in detector performance over a broad spectral range (300 nm - 1100 nm) after sensitization with quantum dots. Reflectance studies suggest that apart from spectral downshifting, the quantum dot layers act as anti-reflection coatings, contributing to overall performance enhancement. Additionally, current-voltage characteristics indicate the formation of a space charge region at the Si-quantum dot interface, further enhancing device performance. Further opto-electronic testing demonstrates the superior performance and stability of CdZnS/ZnS core-shell QD-sensitized devices compared to perovskite CsPbBr3 QD-devices. Our study provides valuable insights into the design and optimization of Si photodetectors with improved sensitivity and extended spectral response.

権利情報:

キーワード: quantum dot, spectral downshifting, photodetector, solution-processed, silicon

刊行年月日: 2024-06-03

出版者: Elsevier BV

掲載誌:

  • Nano Energy (ISSN: 22112855) vol. 128 109832

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4679

公開URL: https://doi.org/10.1016/j.nanoen.2024.109832

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更新時刻: 2024-08-23 14:00:21 +0900

MDRでの公開時刻: 2026-06-03 09:12:34 +0900

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