Keyword: Limit of detection
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HR-EELS2_revised.pdf
Detection limit of defect-induced strain in GaN evaluated by valence EELS and correlated structural analysis
Journal article
Creator
Shunsuke Yamashita (author) (Search by this author)
Sony Semiconductor Solutions Corporation
;
Jun Kikkawa (author) (Search by this author)
Center for Basic Research on Materials/Advanced Materials Characterization Field/Electron Microscopy Group, National Institute for Materials Science
ORCID SAMURAI ;
Susumu Kusanagi (author) (Search by this author)
Sony Semiconductor Solutions Corporation
;
Ichiro Nomachi (author) (Search by this author)
Sony Semiconductor Solutions Corporation
;
Ryoji Arai (author) (Search by this author)
Sony Semiconductor Solutions Corporation
;
Yuya Kanitani (author) (Search by this author)
Sony Semiconductor Solutions Corporation
;
Koji Kimoto (author) (Search by this author)
Center for Basic Research on Materials, National Institute for Materials Science
ORCID SAMURAI ;
Yoshihiro Kudo (author) (Search by this author)
Sony Semiconductor Solutions Corporation
Keyword
Limit of detection, Detection threshold, Physical analysis, Gallium nitride, Valence electron energy loss spectroscopy (VEELS), Low-loss spectrum
Date published
2026-01-01
Updated at
2026-04-30 12:01:11 +0900
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