Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene

Journal article

Creator

Alexander Rothstein (author) (Search by this author)

Alexander Rothstein ;

Ammon Fischer (author) (Search by this author)

Ammon Fischer ;

Anthony Achtermann (author) (Search by this author)

Anthony Achtermann ;

Eike Icking (author) (Search by this author)

Eike Icking ;

Katrin Hecker (author) (Search by this author)

Katrin Hecker ;

Luca Banszerus (author) (Search by this author)

Luca Banszerus ;

Martin Otto (author) (Search by this author)

Martin Otto ;

Stefan Trellenkamp (author) (Search by this author)

Stefan Trellenkamp ;

Florian Lentz (author) (Search by this author)

Florian Lentz ;

Kenji Watanabe (author) (Search by this author)

https://orcid.org/0000-0003-3701-8119

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Kenji Watanabe ;

Takashi Taniguchi (author) (Search by this author)

https://orcid.org/0000-0002-1467-3105

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Takashi Taniguchi ;

Bernd Beschoten (author) (Search by this author)

Bernd Beschoten ;

Robin J. Dolleman (author) (Search by this author)

Robin J. Dolleman ;

Dante M. Kennes (author) (Search by this author)

Dante M. Kennes ;

Christoph Stampfer (author) (Search by this author)

Christoph Stampfer

Keyword

Twisted bilayer graphene, Single-electron transistor, Coulomb blockade

Date published

2025-04-23

Updated at

2026-07-28 16:30:43 +0900