ジャーナル論文 Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene
Alexander Rothstein (author) (この著者で検索)
;
Ammon Fischer (author) (この著者で検索)
;
Anthony Achtermann (author) (この著者で検索)
;
Eike Icking (author) (この著者で検索)
;
Katrin Hecker (author) (この著者で検索)
;
Luca Banszerus (author) (この著者で検索)
;
Martin Otto (author) (この著者で検索)
;
Stefan Trellenkamp (author) (この著者で検索)
;
Florian Lentz (author) (この著者で検索)
;
Kenji Watanabe (author) (この著者で検索)
ORCID SAMURAI ;
Takashi Taniguchi (author) (この著者で検索)
ORCID SAMURAI ;
Bernd Beschoten (author) (この著者で検索)
;
Robin J. Dolleman (author) (この著者で検索)
;
Dante M. Kennes (author) (この著者で検索)
;
Christoph Stampfer (author) (この著者で検索)
コレクション

引用
Alexander Rothstein, Ammon Fischer, Anthony Achtermann, Eike Icking, Katrin Hecker, Luca Banszerus, Martin Otto, Stefan Trellenkamp, Florian Lentz, Kenji Watanabe, Takashi Taniguchi, Bernd Beschoten, Robin J. Dolleman, Dante M. Kennes, Christoph Stampfer. Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene. Nano Letters. 2025, 25 (16), 6429-6437. https://doi.org/10.1021/acs.nanolett.4c06492

説明:

(abstract)

Twisted bilayer graphene (tBLG) near the magic angle is a unique platform where the combination of topology and strong correlations gives rise to exotic electronic phases. These phases are gate-tunable and related to the presence of flat electronic bands, isolated by single-particle band gaps. This enables gate-controlled charge confinements, essential for the operation of single-electron transistors (SETs), and allows one to explore the interplay of confinement, electron interactions, band renormalization, and the moiré superlattice, potentially revealing key paradigms of strong correlations. Here, we present gate-defined SETs in tBLG with well-tunable Coulomb blockade resonances. These SETs allow us to study magnetic field-induced quantum oscillations in the density of states of the source-drain reservoirs, providing insight into gate-tunable Fermi surfaces of tBLG. Comparison with tight-binding calculations highlights the importance of displacement-field-induced band renormalization crucial for future advanced gate-tunable quantum devices and circuits in tBLG including, e.g., quantum dots and Josephson junction arrays.

権利情報:

  • In Copyright

    This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2025 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.4c06492

キーワード: Twisted bilayer graphene, Single-electron transistor, Coulomb blockade

刊行年月日: 2025-04-23

出版者: American Chemical Society (ACS)

掲載誌:

  • Nano Letters (ISSN: 15306984) vol. 25 issue. 16 p. 6429-6437

研究助成金:

  • European Research Council 820254
  • Ministry of Education, Culture, Sports, Science and Technology
  • Ministero dell?Istruzione, dell?Universit? e della Ricerca 437214324
  • Deutsche Forschungsgemeinschaft 437214324
  • Deutsche Forschungsgemeinschaft 471733165
  • Deutsche Forschungsgemeinschaft 534269806
  • Deutsche Forschungsgemeinschaft EXC 2004/1 - 390534769
  • Deutsche Forschungsgemeinschaft SPP 2244 535377524
  • Japan Society for the Promotion of Science 21H05233
  • Japan Society for the Promotion of Science 23H02052
  • Helmholtz Nano Facility

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.4c06492

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更新時刻: 2026-07-28 16:30:43 +0900

MDRでの公開時刻: 2026-07-28 18:26:53 +0900

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