Journal article Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene
Alexander Rothstein (author) (Search by this author)
;
Ammon Fischer (author) (Search by this author)
;
Anthony Achtermann (author) (Search by this author)
;
Eike Icking (author) (Search by this author)
;
Katrin Hecker (author) (Search by this author)
;
Luca Banszerus (author) (Search by this author)
;
Martin Otto (author) (Search by this author)
;
Stefan Trellenkamp (author) (Search by this author)
;
Florian Lentz (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
ORCID SAMURAI ;
Takashi Taniguchi (author) (Search by this author)
ORCID SAMURAI ;
Bernd Beschoten (author) (Search by this author)
;
Robin J. Dolleman (author) (Search by this author)
;
Dante M. Kennes (author) (Search by this author)
;
Christoph Stampfer (author) (Search by this author)
Collection

Citation
Alexander Rothstein, Ammon Fischer, Anthony Achtermann, Eike Icking, Katrin Hecker, Luca Banszerus, Martin Otto, Stefan Trellenkamp, Florian Lentz, Kenji Watanabe, Takashi Taniguchi, Bernd Beschoten, Robin J. Dolleman, Dante M. Kennes, Christoph Stampfer. Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene. Nano Letters. 2025, 25 (16), 6429-6437. https://doi.org/10.1021/acs.nanolett.4c06492

Description:

(abstract)

Twisted bilayer graphene (tBLG) near the magic angle is a unique platform where the combination of topology and strong correlations gives rise to exotic electronic phases. These phases are gate-tunable and related to the presence of flat electronic bands, isolated by single-particle band gaps. This enables gate-controlled charge confinements, essential for the operation of single-electron transistors (SETs), and allows one to explore the interplay of confinement, electron interactions, band renormalization, and the moiré superlattice, potentially revealing key paradigms of strong correlations. Here, we present gate-defined SETs in tBLG with well-tunable Coulomb blockade resonances. These SETs allow us to study magnetic field-induced quantum oscillations in the density of states of the source-drain reservoirs, providing insight into gate-tunable Fermi surfaces of tBLG. Comparison with tight-binding calculations highlights the importance of displacement-field-induced band renormalization crucial for future advanced gate-tunable quantum devices and circuits in tBLG including, e.g., quantum dots and Josephson junction arrays.

Rights:

  • In Copyright

    This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2025 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.4c06492

Keyword: Twisted bilayer graphene, Single-electron transistor, Coulomb blockade

Date published: 2025-04-23

Publisher: American Chemical Society (ACS)

Journal:

  • Nano Letters (ISSN: 15306984) vol. 25 issue. 16 p. 6429-6437

Funding:

  • European Research Council 820254
  • Ministry of Education, Culture, Sports, Science and Technology
  • Ministero dell?Istruzione, dell?Universit? e della Ricerca 437214324
  • Deutsche Forschungsgemeinschaft 437214324
  • Deutsche Forschungsgemeinschaft 471733165
  • Deutsche Forschungsgemeinschaft 534269806
  • Deutsche Forschungsgemeinschaft EXC 2004/1 - 390534769
  • Deutsche Forschungsgemeinschaft SPP 2244 535377524
  • Japan Society for the Promotion of Science 21H05233
  • Japan Society for the Promotion of Science 23H02052
  • Helmholtz Nano Facility

Manuscript type: Author's version (Accepted manuscript)

MDR DOI:

First published URL: https://doi.org/10.1021/acs.nanolett.4c06492

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Updated at: 2026-07-28 16:30:43 +0900

Published on MDR: 2026-07-28 18:26:53 +0900

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