2 records found.
Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics
- Journal article
- Creator
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Yoshiki Sakuma (author) (Search by this author)National Institute for Materials Science
;
;Keisuke Atsumi (author) (Search by this author)Takanobu Hiroto (author) (Search by this author)National Institute for Materials Science
;
Jun Nara (author) (Search by this author)National Institute for Materials Science
;
Akihiro Ohtake (author) (Search by this author)National Institute for Materials Science
;
;Yuki Ono (author) (Search by this author);Takashi Matsumoto (author) (Search by this author);Yukihiro Muta (author) (Search by this author);Kai Takeda (author) (Search by this author);Emi Kano (author) (Search by this author);Toshiki Yasuno (author) (Search by this author);Xu Yang (author) (Search by this author);Nobuyuki Ikarashi (author) (Search by this author);Asato Suzuki (author) (Search by this author);Michio Ikezawa (author) (Search by this author);Shuhong Li (author) (Search by this author);Tomonori Nishimura (author) (Search by this author);Kaito Kanahashi (author) (Search by this author)Kosuke Nagashio (author) (Search by this author) - Keyword
- MoS2, epitaxial growth, MOCVD
- Date published
- 2026-01-21
- Updated at
- 2026-01-29 16:30:04 +0900
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
- Journal article
- Creator
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;Hironori Okumura (author) (Search by this author);Yohei Ogawara (author) (Search by this author);Manabu Togawa (author) (Search by this author);Masaya Miyahara (author) (Search by this author);Tadaaki Isobe (author) (Search by this author);Kosuke Itabashi (author) (Search by this author);Jiro Nishinaga (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
- Keyword
- Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Proton, Xe, Radiation irradiations, GaN
- Date published
- 2023-06-01
- Updated at
- 2024-08-24 08:30:18 +0900