Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application
- Journal article
- Creator
-
Masatomo Sumiya (author) (Search by this author)National Institute for Materials Science
;
;Osamu Goto (author) (Search by this author);Yuki Takahara (author) (Search by this author)Yasutaka Imanaka (author) (Search by this author)National Institute for Materials Science
;
Liwen Sang (author) (Search by this author)National Institute for Materials Science
;
;Noboru Fukuhara (author) (Search by this author);Taichiro Konno (author) (Search by this author);Fumimasa Horikiri (author) (Search by this author);Takeshi Kimura (author) (Search by this author);Akira Uedono (author) (Search by this author)Hajime Fujikura (author) (Search by this author) - Keyword
- HEMT, III-V nitride semiconductor, heterointerface
- Date published
- 2023-08-01
- Updated at
- 2024-12-10 16:56:26 +0900
Low-noise and compact detection system using RF MEMS switch for solid-state NMR spectroscopy at cryogenic temperature: Proof-of-concept experiment
- Journal article
- Creator
-
Sotaro Nishioka (author) (Search by this author)
;
;Naoki Sakuyama (author) (Search by this author)Ken Obara (author) (Search by this author)
https://orcid.org/0000-0002-6981-6521
(unauthenticated)
;
Akiko T. Saito (author) (Search by this author)
;
;Mitsuharu Yashima (author) (Search by this author)Hidekazu Mukuda (author) (Search by this author) - Keyword
- NMR, MEMS switch, Cryogenic amplifier, HEMT, Cryogenics
- Date published
- 2025-10-01
- Updated at
- 2026-01-15 09:32:30 +0900