Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Encarnaciόn G. Vίllora (author) (Search by this author)
;
Kiyoshi Shimamura (author) (Search by this author)
- Keyword
- β-Ga2O3, heteroepitaxy
- Date published
- 2014-10-28
- Updated at
- 2024-01-22 09:35:42 +0900
Effect of temperature and HCl partial pressure on the selective area gas etching of (001) β-Ga2O3
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- β-Ga2O3, etching
- Date published
- 2023-08-01
- Updated at
- 2024-08-21 08:30:30 +0900