Effects of oxidant selection for atomic layer deposition on impurity removal and crystallinity of as-grown Hf1− x Zr x O2 thin films

Journal article

Creator

Haoming Che (author) (Search by this author)

Haoming Che ;

Takashi Onaya (author) (Search by this author)

https://orcid.org/0000-0002-2710-8623 (unauthenticated)

National Institute for Materials Science

Takashi Onaya ;

Atsushi Tamura (author) (Search by this author)

Atsushi Tamura ;

Masaki Ishii (author) (Search by this author)

Masaki Ishii ;

Hiroshi Taka (author) (Search by this author)

Hiroshi Taka ;

Koji Kita (author) (Search by this author)

Koji Kita

Keyword

atomic layer deposition, ferroelectric HfO2-based thin films, oxidant, low temperature fabrication process

Date published

2026-05-01

Updated at

2026-07-14 10:27:45 +0900