Study of Local Band Bending in n-Channel In₂O₃ Thin-Film Transistors under Gate and Drain Voltage Stress Using Operando Hard X-ray Photoelectron Spectroscopy

Journal article

Creator

Ibrahima Gueye (author) (Search by this author)

https://orcid.org/0000-0001-5296-3894 (unauthenticated)

Ibrahima Gueye ;

Akira Yasui (author) (Search by this author)

Akira Yasui ;

Yasumasa Takagi (author) (Search by this author)

https://orcid.org/0000-0001-8064-3345 (unauthenticated)

Yasumasa Takagi ;

Atsushi Ogura (author) (Search by this author)

Atsushi Ogura ;

Osami Sakata (author) (Search by this author)

https://orcid.org/0000-0003-2626-0161 (unauthenticated)

Osami Sakata ;

Takahiro Nagata (author) (Search by this author)

https://orcid.org/0000-0002-8591-2943

NIMS Researchers Directory SAMURAI

Takahiro Nagata

Keyword

hard X-ray photoelectron spectroscopy, Indium oxide, operando, oxide thin-film transistor, oxide semiconductor

Date published

2025-09-24

Updated at

2026-04-30 12:01:11 +0900