3 records found.
Identification of the monolayer thickness difference in a mechanically exfoliated thick flake of hexagonal boron nitride and graphite for van der Waals heterostructures
- Journal article
- Creator
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;Yoshiaki Hattori (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Masatoshi Kitamura (author) (Search by this author) - Keyword
- Hexagonal boron nitride, van der Waals heterostructures, optical microscope
- Date published
- 2023-07-16
- Updated at
- 2025-02-15 12:30:44 +0900
Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride
- Journal article
- Creator
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;A Pierret (author) (Search by this author);D Mele (author) (Search by this author);H Graef (author) (Search by this author);J Palomo (author) (Search by this author)T Taniguchi (author) (Search by this author)National Institute for Materials Science
;
K Watanabe (author) (Search by this author)National Institute for Materials Science
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;Y Li (author) (Search by this author);B Toury (author) (Search by this author);C Journet (author) (Search by this author);P Steyer (author) (Search by this author);V Garnier (author) (Search by this author);A Loiseau (author) (Search by this author);J-M Berroir (author) (Search by this author);E Bocquillon (author) (Search by this author);G Fève (author) (Search by this author);C Voisin (author) (Search by this author);E Baudin (author) (Search by this author);M Rosticher (author) (Search by this author)B Plaçais (author) (Search by this author)
- Keyword
- Hexagonal boron nitride, dielectric characterization, trap-assisted electron transport
- Date published
- 2022-06-01
- Updated at
- 2025-02-26 12:30:49 +0900
Defect Passivation of 2D Semiconductors by Fixating Chemisorbed Oxygen Molecules via h‐BN Encapsulations
- Journal article
- Creator
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;Jin‐Woo Jung (author) (Search by this author);Hyeon‐Seo Choi (author) (Search by this author);Young‐Jun Lee (author) (Search by this author);Youngjae Kim (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
;Min‐Yeong Choi (author) (Search by this author);Jae Hyuck Jang (author) (Search by this author);Hee‐Suk Chung (author) (Search by this author);Dohun Kim (author) (Search by this author);Youngwook Kim (author) (Search by this author)Chang‐Hee Cho (author) (Search by this author)
- Keyword
- Hexagonal boron nitride, defect-related gap states, WS2 crystals
- Date published
- 2024-03-17
- Updated at
- 2025-02-14 12:32:08 +0900