Download file (932KB)
Download as zip (729KB)

コレクション

引用

説明:

In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10–100 nm range, made of large high-pressure, high-temperature (HPHT) crystals and a polymer derivative ceramics (PDC) crystals. We deduce an out-of-plane low field dielectric constant ε∥ = 3.4 ± 0.2 consistent with the theoretical prediction of Ohba et al., that narrows down the generally accepted window ε∥ = 3–4. The DC-current leakage at high-field is found to obey the Frenkel-Pool law for thermally-activated trap-assisted electron transport with a dynamic dielectric constant ε∥ ≃ 3.1 and a trap energy ΦB ≃ 1.3 eV, that is comparable with standard technologically relevant dielectrics.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Hexagonal boron nitride, dielectric characterization, trap-assisted electron transport

刊行年月日: 2022-06-01

出版者: IOP Publishing

掲載誌:

• Materials Research Express (ISSN: 20531591) vol. 9 issue. 6 065901

研究助成金:

• ANR ANR-14-CE08-018-05
• European Union “Horizon 2020” 881603

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1088/2053-1591/ac4fe1

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-02-26 12:30:49 +0900

MDRでの公開時刻: 2025-02-26 12:30:49 +0900