A Pierret
;
D Mele
;
H Graef
;
J Palomo
;
T Taniguchi
(National Institute for Materials Science
)
;
K Watanabe
(National Institute for Materials Science
)
;
Y Li
;
B Toury
;
C Journet
;
P Steyer
;
V Garnier
;
A Loiseau
;
J-M Berroir
;
E Bocquillon
;
G Fève
;
C Voisin
;
E Baudin
;
M Rosticher
;
B Plaçais
Description:
(abstract)In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10–100 nm range, made of large high-pressure, high-temperature (HPHT) crystals and a polymer derivative ceramics (PDC) crystals. We deduce an out-of-plane low field dielectric constant ε∥ = 3.4 ± 0.2 consistent with the theoretical prediction of Ohba et al., that narrows down the generally accepted window ε∥ = 3–4. The DC-current leakage at high-field is found to obey the Frenkel-Pool law for thermally-activated trap-assisted electron transport with a dynamic dielectric constant ε∥ ≃ 3.1 and a trap energy ΦB ≃ 1.3 eV, that is comparable with standard technologically relevant dielectrics.
Rights:
Keyword: Hexagonal boron nitride, dielectric characterization, trap-assisted electron transport
Date published: 2022-06-01
Publisher: IOP Publishing
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1088/2053-1591/ac4fe1
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Updated at: 2025-02-26 12:30:49 +0900
Published on MDR: 2025-02-26 12:30:49 +0900
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