2 records found.
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
- Journal article
- Creator
-
Takahiro Nagata (author) (Search by this author)
;
Asahiko Matsuda (author) (Search by this author)
;
Takashi Teramoto (author) (Search by this author)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
;
Dominic Gerlach (author) (Search by this author)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
;
Peng Shen (author) (Search by this author)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
;
Shigenori Ueda (author) (Search by this author)
;
Takako Kimura (author) (Search by this author)
https://orcid.org/0009-0007-0109-4482
(unauthenticated)
;
Christian Dussarrat (author) (Search by this author)
https://orcid.org/0009-0000-1063-6473
(unauthenticated)
;
Toyohiro Chikyow (author) (Search by this author)
- Keyword
- gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
- Date published
- 2025-03-07
- Updated at
- 2025-03-26 17:26:31 +0900
Direct Analysis of Stacked Au/Ti/In2O3/Al2O3/p+-Si Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy
- Journal article
- Creator
-
Ibrahima Gueye (author) (Search by this author)
https://orcid.org/0000-0001-5296-3894
(unauthenticated)
National Institute for Materials Science
;
Shigenori Ueda (author) (Search by this author)National Institute for Materials Science
;
;Atsushi Ogura (author) (Search by this author)Takahiro Nagata (author) (Search by this author)National Institute for Materials Science
- Keyword
- Operando, HAXPES, Interfaces, In2O3, Al2O3, Band bending, Chemical-structures
- Date published
- 2024-05-28
- Updated at
- 2025-05-15 08:30:10 +0900