2 records found.
Observation of weak localization in dual-gated bilayer
- Journal article
- Creator
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;Tingyu Qu (author) (Search by this author);Michele Masseroni (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
;Barbaros Özyilmaz (author) (Search by this author);Thomas Ihn (author) (Search by this author)Klaus Ensslin (author) (Search by this author) - Keyword
- Magnetoresistance, bilayer MoS2, weak localization
- Date published
- 2024-02-28
- Updated at
- 2025-02-23 22:47:29 +0900
Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer
- Journal article
- Creator
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;Dongyang Yang (author) (Search by this author);Jing Liang (author) (Search by this author);Jingda Wu (author) (Search by this author);Yunhuan Xiao (author) (Search by this author);Jerry I. Dadap (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Ziliang Ye (author) (Search by this author)
- Keyword
- Sliding ferroelectricity, bilayer MoS2, polarization switching
- Date published
- 2024-02-15
- Updated at
- 2025-02-08 12:30:20 +0900