Download file (3.53MB)
Download as zip (3.35MB)

コレクション

引用

説明:

We investigate the magnetoresistance of a dual-gated bilayer MoS2 encapsulated by hexagonal boron nitride. At low magnetic fields (|B| < 0.5 T), we observe a negative magnetoresistance, which we identify as the weak localization effect. We determine both the phase coherence length and mean free path as a function of electron density and displacement field. Both characteristic lengths show a similar monotonic increase with electron density, while they are not affected by the displacement field. We further investigate the dephasing mechanism by measuring the temperature dependence of the phase coherence length. Our results suggest that when only the lower spin-orbit split bands (K ↑, K′ ↓) contribute to transport is Coulomb scattering the dominant source of decoherence, while intervalley scattering seems not to play a relevant role in this regime. This observation is consistent with the picture of spin-polarized valleys (spin-valley locking), where the intrinsic spin-orbit coupling protects the spin states, rather than introducing an additional dephasing mechanism as in other materials.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Magnetoresistance, bilayer MoS2, weak localization

刊行年月日: 2024-02-28

出版者: American Physical Society (APS)

掲載誌:

• Physical Review Research (ISSN: 26431564) vol. 6 issue. 1 013216

研究助成金:

• European Research Council 95154
• Japan Society for the Promotion of Science 19H05790
• Japan Society for the Promotion of Science 20H00354
• Japan Society for the Promotion of Science 21H05233

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1103/physrevresearch.6.013216

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-02-23 22:47:29 +0900

MDRでの公開時刻: 2025-02-23 22:47:29 +0900