Keyword: Al2O3
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4 records found. Displaying records 1 to 4.

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band_structure.png
Ab-initio phonon calculation for Al2O3 / R-3c (167) / materials id 1143
Dataset
Collection
MDR phonon calculation database
Creator
Atsushi Togo (author) (Search by this author)
MaDIS, National Institute for Materials Science
ORCID SAMURAI
Keyword
Phonon, Al2O3, R-3c (167)
Date published
Updated at
2023-05-14 18:33:33 +0900
0119Al2O31.png
Original dataset for ID 44 Al2O3 in Thermophysical Property Database
Dataset
Collection
Thermophysical Property Original Datasets
Creator
Takehiko Ishikawa (depositor) (Search by this author)
Japan Aerospace Exploration Agency
;
Masashi Ishii (editor) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI
Keyword
Al2O3, Ceramic, Drop oscillation, VELF, Electrostatic Levitation, collection - Thermophys Datasets
Date published
Updated at
2024-03-30 18:38:59 +0900
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First-principles lattice thermal conductivity calculation for Al2O3 / R-3c (167) / materials id 1143
Dataset
Collection
MDR lattice thermal conductivity calculation database
Creator
Atsushi Togo (author) (Search by this author)
Center for Basic Research on Materials, National Institute for Materials Science
ORCID SAMURAI
Keyword
Lattice thermal conductivity, Al2O3
Date published
Updated at
2026-01-24 14:12:10 +0900
Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
Journal article
Creator
Toshihide Nabatame (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Hiromi Miura (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Manami Miyamoto (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Takashi Onaya (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID ;
Yasuo Koide (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
Date published
2026-06-01
Updated at
2026-08-18 11:30:17 +0900
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