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MDR phonon calculation database(7)
MDR lattice thermal conductivity calculation database(5)
NIMS Archives(3)
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HfO2 (11)
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Auger depth profiling analysis (8)
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MoS2 (3)
diamond (3)
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84 records found. Displaying records 81 to 84.
Amorphous oxide cathode enabling room-temperature rechargeable magnesium batteries
Journal article
Creator
Tomoya Kawaguchi
(author) (
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)
https://orcid.org/0000-0002-7600-4847
(unauthenticated)
Tomoya Kawaguchi
;
Hikari Sakurai
(author) (
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)
Hikari Sakurai
;
Shusuke Fukui
(author) (
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)
Shusuke Fukui
;
Xiatong Ye
(author) (
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)
https://orcid.org/0000-0002-5932-5964
(unauthenticated)
Xiatong Ye
;
Hongyi Li
(author) (
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)
https://orcid.org/0000-0003-1890-3825
(unauthenticated)
Hongyi Li
;
Toshihiko Mandai
(author) (
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)
https://orcid.org/0000-0002-2403-7794
NIMS Researchers Directory SAMURAI
Toshihiko Mandai
;
Norihiko L. Okamoto
(author) (
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)
https://orcid.org/0000-0003-0199-7271
(unauthenticated)
Norihiko L. Okamoto
;
Tetsu Ichitsubo
(author) (
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)
https://orcid.org/0000-0002-1127-3034
(unauthenticated)
Tetsu Ichitsubo
Keyword
Amorphous oxide cathode
,
Rechargeable magnesium battery
,
free volume
Date published
2025-09-17
Updated at
2025-10-21 16:06:37 +0900
First-Principles Studies on Spin-Dependent Transport of Magnetic Junctions with Half-Metallic Heusler Compounds
Journal article
Creator
Y. Miura
(author) (
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)
https://orcid.org/0000-0002-5605-5452
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Y. Miura
Keyword
magnetoresistance, first-principles calculation, Heusler compound, TMR, CPP-GMR, ballistic transport, exchange stiffness
Date published
2023-07-01
Updated at
2024-05-24 16:30:15 +0900
NIMS 5年の歩み
Book
Collection
NIMS Archives
Creator
物質・材料研究機構
(editor) (
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)
物質・材料研究機構
Keyword
NIMS
,
物質・材料研究機構
Date published
2006-02-10
Updated at
2025-01-14 15:42:13 +0900
無機材質研究所創立30周年記念誌 : 21世紀を支える先端無機材質の研究
Book
Collection
NIMS Archives
Creator
無機材質研究所創立30周年記念誌編集委員
(editor) (
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)
無機材質研究所創立30周年記念誌編集委員
Keyword
無機材質研究所
Date published
1996-11-01
Updated at
2025-01-14 15:40:12 +0900
Keyword
HfO2
(11)
HfO2/Si
(10)
Auger depth profiling analysis
(8)
Ultra low angle incidence ion beam
(8)
Phonon
(7)
Lattice thermal conductivity
(5)
IMFP
(3)
MoS2
(3)
diamond
(3)
inelastic mean free path
(3)
Boron-doped diamond
(2)
Ga2O3
(2)
NIMS
(2)
Pbca (61)
(2)
Ultra Low Angle Incidence Ion Beam
(2)
atomic layer deposition
(2)
dielectric function model
(2)
energy loss function
(2)
epitaxy
(2)
ferroelectric HfO2-based thin films
(2)
graphene
(2)
hexagonal boron nitride
(2)
modified Bethe equation
(2)
power device
(2)
物質・材料研究機構
(2)
Hf0.5Zr0.5O2
(1)
Nb3Sn reaction
(1)
Polar axis orientation
(1)
Pulse laser deposition
(1)
{100} Orientation control
(1)
(Al,Sc)N Films
(1)
2D semiconductor
(1)
ACOM-TEM
(1)
ATO
(1)
All 2D heterostructure devices
(1)
Amorphous oxide cathode
(1)
Auger Depth Profiling Analysis
(1)
Auger Depth Profiling analysis
(1)
Band to band tunneling
(1)
Bayesian estimation
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Bethe equation
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C60 pyrrolidine tris-acid
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Cluster Analysis
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Coulomb interactions
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CrI3
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DNA translocation
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Epitaxial film
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Exchange Monte Carlo method
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Fd-3m (227)
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(1)
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(1)
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(1)
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(1)
Nb3Sn
(1)
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(1)
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(1)
Nonvolatile memory technology
(1)
Organic antiambipolar transistor
(1)
P2_1/c (14)
(1)
P4_2/mnm (136)
(1)
Pareto solutions
(1)
Pbcn (60)
(1)
Pca2_1 (29)
(1)
Raman spectroscopy
(1)
ReS2
(1)
Rechargeable magnesium battery
(1)
Reconfigurable artificial synapses
(1)
SESSA
(1)
Schottky diode
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(1)
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(1)
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(1)
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(1)
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(1)
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(1)
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(1)
anisotropic etching
(1)
atomically thin semiconductors
(1)
barrier-free contact
(1)
carbon nanotubes
(1)
chemical potential
(1)
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(1)
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current collector corrosion
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dielectric strength
(1)
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effective attenuation length
(1)
electrolyte decomposition
(1)
electron inelastic mean free path
(1)
element addition
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elemental solids
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(1)
field-induced phase transition
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flexural strength
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forming gas
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free energy
(1)
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(1)
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(1)
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(1)
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(1)
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(1)
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(1)
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hafnium carbide
(1)
high speed modulator
(1)
high-temperature materials
(1)
impurity doping
(1)
indium selenide
(1)
information depth
(1)
interface engineering
(1)
interfacialchargetransfer
(1)
laser annealing
(1)
low temperature fabrication process
(1)
magnesium rechargeable batteries
(1)
magnetoresistance, first-principles calculation, Heusler compound, TMR, CPP-GMR, ballistic transport, exchange stiffness
(1)
mean escape depth
(1)
mechanical stress
(1)
memory devices
(1)
nanolaminate
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polycrystalline growth
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(1)
surface sensitivity
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terahertz frequency
(1)
thermal conductivity; thermal insulator; thin film; superlattice; transparency
(1)
thin film
(1)
top-gatefield-effecttransistors
(1)
trace water
(1)
transfer-freedevicefabrication
(1)
transistors
(1)
transition voltage spectroscopy
(1)
tunneling current
(1)
van der Waals heterojunction
(1)
wafer-scale2Dsemiconductors
(1)
weakly coordinating anion
(1)
α-Ga2O3
(1)
アンチ・アンバイポーラトランジスタ
(1)
ダイヤモンド
(1)
トランジスタ
(1)
ロジック・イン・メモリ
(1)
再構成可能2入力論理回路
(1)
原子層堆積法
(1)
多値論理回路
(1)
無機材質研究所
(1)
負性微分トランスコンダクタンス
(1)
電界効果
(1)
RDE metadata def
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Filter
Collection
MDR phonon calculation database(7)
MDR lattice thermal conductivity calculation database(5)
NIMS Archives(3)
Resource type
Journal article(59)
Dataset(20)
Book(4)
Conference paper(1)
Keyword
HfO2 (11)
HfO2/Si (10)
Auger depth profiling analysis (8)
Ultra low angle incidence ion beam (8)
Phonon (7)
Lattice thermal conductivity (5)
IMFP (3)
MoS2 (3)
diamond (3)
inelastic mean free path (3)
(more)
License
In Copyright (38)
Creative Commons BY Attribution 4.0 International (28)
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (9)
Creative Commons BY-NC Attribution-NonCommercial 4.0 International (5)
cc-by-nc-3.0 (1)
File type
application/pdf (67)
application/x-xz (12)
image/png (12)
application/zip (10)
text/x-log (5)
application/vnd.openxmlformats-officedocument.wordprocessingml.document (3)
text/plain (3)