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InGaN_JAP_manuscript_251203_09_04_mark.docx

Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control

ジャーナル論文
著者: Masataka Imura (author) (この著者で検索)

https://orcid.org/0000-0002-4236-9549

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

;

Takanobu Hiroto (author) (この著者で検索)

https://orcid.org/0000-0002-6176-5782

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

;

Takaaki Mano (author) (この著者で検索)

https://orcid.org/0000-0002-6955-260X

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

;

Yuri Itokazu (author) (この著者で検索)

;

Masafumi Jo (author) (この著者で検索)
キーワード: MOVPE, GaN, InN, InGaN, XRD, Superlattice
刊行年月日: 2026-03-21
更新時刻: 2026-04-03 09:31:08 +0900

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Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control

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