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Effect of strain-induced defects in GaN channel on two-dimensional carrier transport in AlGaN/GaN heterostructures

ジャーナル論文
著者: Masatomo Sumiya (author) (この著者で検索)

https://orcid.org/0000-0003-0960-3812

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

;

Yasutaka Imanaka (author) (この著者で検索)

https://orcid.org/0000-0003-2804-4438

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

;

Yoshitaka Nakano (author) (この著者で検索)
キーワード: AlGaN/GaN heterostructure, two-dimensional electron gas
刊行年月日: 2025-09-08
更新時刻: 2025-09-17 16:30:34 +0900

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Effect of strain-induced defects in GaN channel on two-dimensional carrier transport in AlGaN/GaN heterostructures

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