High Doping Activation (≥1020 cm−3) in Tensile-Strained n‑Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing

Article

Creator

Rahmat Hadi Saputro ; Tatsuro Maeda ; Kaoru Toko ; Ryo Matsumura ; Naoki Fukata

Keyword

germanium, thin film, polycrystalline growth, laser annealing, impurity doping

Date published

2024-06-25

Updated at

2025-06-03 08:30:17 +0900