High Doping Activation (≥1020 cm−3) in Tensile-Strained n‑Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing

Journal article

Creator

Rahmat Hadi Saputro (author) (Search by this author)

https://orcid.org/0000-0001-7035-1680

Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group, National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Rahmat Hadi Saputro ;

Tatsuro Maeda (author) (Search by this author)

AIST

Tatsuro Maeda ;

Kaoru Toko (author) (Search by this author)

Graduate School of Pure and Applied Sciences University of Tsukuba

Kaoru Toko ;

Ryo Matsumura (author) (Search by this author)

https://orcid.org/0000-0003-2303-4978

Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group, National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Ryo Matsumura ;

Naoki Fukata (author) (Search by this author)

https://orcid.org/0000-0002-0986-8485

Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Naoki Fukata

Keyword

germanium, thin film, polycrystalline growth, laser annealing, impurity doping

Date published

2024-06-25

Updated at

2025-06-03 08:30:17 +0900