3 records found. Displaying records 1 to 3.
耐圧1.7 kV超のノーマリーオフ型ホウ素ドープダイヤモンド金属–酸化膜–半導体電界効果トランジスタ
- Journal article
- Creator
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劉 江偉 (author) (Search by this author)電子・光機能材料研究センター/光学材料分野/半導体欠陥制御グループ, 物質・材料研究機構
;
寺地 徳之 (author) (Search by this author)電子・光機能材料研究センター/光学材料分野/半導体欠陥制御グループ, 物質・材料研究機構
;
達 博 (author) (Search by this author)マテリアル基盤研究センター/先端解析分野/量子ビーム回折グループ, 物質・材料研究機構
;
小出 康夫 (author) (Search by this author)名城大学 - Keyword
- diamond
- Date published
- 2026-01-25
- Updated at
- 2026-07-21 17:18:19 +0900
Impact of doping profile on electrical performance of boron-doped diamond metal–oxide–semiconductor field-effect transistors
- Journal article
- Creator
-
J. Liu (author) (Search by this author)
;
T. Teraji (author) (Search by this author)
- Keyword
- diamond
- Date published
- 2026-07-14
- Updated at
- 2026-07-14 10:52:28 +0900
Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
- Journal article
- Creator
-
Kongping Wu (author) (Search by this author)
https://orcid.org/0000-0001-5672-7610
(unauthenticated)
;
;Renxiang Cheng (author) (Search by this author);Leng Zhang (author) (Search by this author);Wenxiu Wang (author) (Search by this author);Fangzhen Li (author) (Search by this author)Meiyong Liao (author) (Search by this author)
- Keyword
- diamond, heat spreader, GaN, calculation
- Date published
- 2024-12-19
- Updated at
- 2025-04-22 08:30:20 +0900