2 records found. Displaying records 1 to 2.
Probing thickness-dependent tip-induced band bending in MoS2
- Journal article
- Creator
-
;Jian Liao (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Jiamin Xue (author) (Search by this author) - Keyword
- Scanning tunneling spectroscopy (STS), Tip-induced band bending (TIBB), MoS2
- Date published
- 2025-03-01
- Updated at
- 2026-07-06 10:34:11 +0900
Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering
- Journal article
- Creator
-
Yoshitaka Shingaya (author) (Search by this author)National Institute for Materials Science
;
Daiki Nishioka (author) (Search by this author)National Institute for Materials Science
;
Kazuya Terabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Tsuchiya (author) (Search by this author)National Institute for Materials Science
- Keyword
- physical reservoir computing, resonant Raman scattering, MoS2, electric double layer transistor, Raman-ion-gating reservoir
- Date published
- 2025-10-23
- Updated at
- 2025-11-17 12:30:04 +0900