Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering

Journal article

Creator

Yoshitaka Shingaya (author) (Search by this author)

https://orcid.org/0000-0002-5926-3302

National Institute for Materials Science

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Yoshitaka Shingaya ;

Daiki Nishioka (author) (Search by this author)

https://orcid.org/0000-0002-3369-7700

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Daiki Nishioka ;

Kazuya Terabe (author) (Search by this author)

https://orcid.org/0000-0003-3988-3456

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Kazuya Terabe ;

Takashi Tsuchiya (author) (Search by this author)

https://orcid.org/0000-0002-6950-6160

National Institute for Materials Science

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Takashi Tsuchiya

Keyword

physical reservoir computing, resonant Raman scattering, MoS2, electric double layer transistor, Raman-ion-gating reservoir

Date published

2025-10-23

Updated at

2025-11-17 12:30:04 +0900